Influence of oxygen partial pressure on structural, transport and magnetic properties of Co doped TiO2 films

Details Influence of oxygen partial pressure on structural, transport and magnetic properties of Co doped TiO2 films Influence of oxygen partial pressure on structural, transport and magnetic properties of Co doped TiO2 films

2007-05-10

arxiv.org/abs/0705.1527v1

Physics

Condensed Matter

Materials Science

20 pages, 6 figures submitted to Journal of Applied Physics

Scientific paper

Thin films of Co-TiO2 are deposited on silicon and quartz substrates using Pulse Laser Deposition (PLD) process at various oxygen partial pressures ranging from 6.6 x 10-3 Pascals (Pa) to 53 Pa. Crystal structure, transport and magnetic properties of reduced CoxTi(1-x)O2 (0

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