Influence of nano-mechanical properties on single electron tunneling: A vibrating Single-Electron Transistor

Details Influence of nano-mechanical properties on single electron tunneling: A vibrating Single-Electron Transistor Influence of nano-mechanical properties on single electron tunneling: A vibrating Single-Electron Transistor

2000-12-08

arxiv.org/abs/cond-mat/0012140v1

Europhys. Lett. 54, 668 (2001).

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 6 figures

Scientific paper

10.1209/epl/i2001-00367-8

We describe single electron tunneling through molecular structures under the influence of nano-mechanical excitations. We develop a full quantum mechanical model, which includes charging effects and dissipation, and apply it to the vibrating C$_{60}$ single electron transistor experiment by Park {\em et al.} {[Nature {\bf 407}, 57 (2000)].} We find good agreement and argue vibrations to be essential to molecular electronic systems. We propose a mechanism to realize negative differential conductance using local bosonic excitations.

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