Physics – Condensed Matter – Materials Science
Scientific paper
2004-04-05
Physics
Condensed Matter
Materials Science
5 pages, 4 figures
Scientific paper
10.1063/1.1782262
Photoluminescence and magnetotransport measurements have been performed to assess the quality of modulation doped GaAs/AlGaAs heterostructures. The temporal evolution of the low-temperature electron mobility of samples prepared in a molecular beam epitaxy chamber containing manganese as a source material was studied. Mn contamination was identified to be responsible for the reduction of the electron mobility to 1 x 10^{6} cm^{2}/Vs and the appearance of a distinct photoluminescence band. In contrast, structures in which this signal is absent reach mobility values of 5.4 x 10^{6} cm^{2}/Vs. This directly proves that the epitaxy of high-mobility electron systems and structures containing GaMnAs layers, in principle, can be combined in one growth chamber.
Reinwald Matthias
Tranitz Hans-Peter
Wagenhuber Klaus
Wegscheider Werner
No associations
LandOfFree
Influence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Influence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Influence of manganese contamination on high-mobility GaAs/AlGaAs heterostructures will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-666542