Influence of hydrogen on paramagnetic defects induced by UV laser exposure in natural silica

Details Influence of hydrogen on paramagnetic defects induced by UV laser exposure in natural silica Influence of hydrogen on paramagnetic defects induced by UV laser exposure in natural silica

2004-10-26

arxiv.org/abs/cond-mat/0410668v1

phys status solidi (c) 2, 616 (2005)

Physics

Condensed Matter

Materials Science

Submitted to Physica Status Solidi

Scientific paper

10.1002/pssc.200460248

Diffusion limited reactions of point defects were investigated in amorphous SiO2 exposed to UV laser light. Electron spin resonance and in situ absorption measurements at room temperature evidenced the annealing of E' centers and the growth of H(II) centers both occurring in the post-irradiation stage and lasting a few hours. These transients are caused by reactions involving molecular hydrogen H2, made available by dimerization of radiolytic H0.

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