Influence of doping level on the Hall coefficient and on the thermoelectric power in $Nd_{2-x}Ce_xCuO_4$

Physics – Condensed Matter – Strongly Correlated Electrons

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4 pages, 4 figures, to be published in PRB

Scientific paper

10.1103/PhysRevB.72.132506

Hall coefficient $R_H$ and thermoelectric power TEP are studied systematically in the single crystals $Nd_{2-x}Ce_xCuO_{4+\delta}$ (NCCO) with different x from underdoped to overdoped regime. With increasing doping level, both $R_H$ and TEP decrease and change their sign from negative to positive. A striking feature is that the temperature dependence of the Hall angle follows a $T^4$ behavior in the underdoped regime, while a $T^2$ in the overdoped regime. These behaviors are closely related to the evolution of Fermi surface with doping level observed by ARPES.

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