Influence of Disorder on the Hall Effect in Bi$_2$Sr$_2$CuO$_{6+δ}$

Details Influence of Disorder on the Hall Effect in Bi$_2$Sr$_2$CuO$_{6+δ}$ Influence of Disorder on the Hall Effect in Bi$_2$Sr$_2$CuO$_{6+δ}$

2006-11-07

arxiv.org/abs/cond-mat/0611184v3

Phys. Rev. B 75, 092502 (2007)

Physics

Condensed Matter

Superconductivity

Scientific paper

10.1103/PhysRevB.75.092502

The in-plane resistivity and Hall coefficient have been measured for the single-layer compound Bi$_2$Sr$_2$CuO$_{6+\delta}$ for the whole range of doping states. The deviation of the Hall coefficient, $R_H$, from a high-temperature linear behavior and the temperature dependence of the Hall angle are both only weakly dependent upon doping, contrasting with Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+\delta}$ and Bi$_2$Sr$_2$CaCuO$_{8+\delta}$. This is in contradiction with former proposals that the transverse transport detects the formation of incoherent Cooper pairs in the pseudogap state. Conversely, the analysis of the data using a phenomenological angular dependent scattering rate clearly allows to distinguish between underdoped and overdoped states, and we propose that the maximum in $R_H(T)$ simply arises due to the combination of a large isotropic scattering rate and an anisotropic temperature dependent one.

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