Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors

Details Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors Influence of band structure effects on domain-wall resistance in diluted ferromagnetic semiconductors

2006-05-09

arxiv.org/abs/cond-mat/0605230v1

Phys. Rev. B 74, 153310 (2006) [4 pages]

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 4 figures, submitted to Phys. Rev. B - Rapid Comm

Scientific paper

10.1103/PhysRevB.74.153310

Intrinsic domain-wall resistance (DWR) in (Ga,Mn)As is studied theoretically and compared to experimental results. The recently developed model of spin transport in diluted ferromagnetic semiconductors [Van Dorpe et al., Phys. Rev. B 72, 205322 (2005)] is employed. The model combines the disorder-free Landauer-B\"uttiker formalism with the tight-binding description of the host band structure. The obtained results show how much the spherical 4x4 kp model [Nguyen, Shchelushkin, and Brataas, cond-mat/0601436] overestimates DWR in the adiabatic limit, and reveal the dependence of DWR on the magnetization profile and crystallographic orientation of the wall.

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