Inelastic Scattering and Spin Polarization in Dilute Magnetic Semiconductor (Ga,Mn)Sb

Details Inelastic Scattering and Spin Polarization in Dilute Magnetic Semiconductor (Ga,Mn)Sb Inelastic Scattering and Spin Polarization in Dilute Magnetic Semiconductor (Ga,Mn)Sb

2007-10-23

arxiv.org/abs/0710.4277v1

Physics

Condensed Matter

Superconductivity

16 pages,4 figures

Scientific paper

10.1063/1.2819608

The Point Contact Andreev Reflection (PCAR) technique has already been used to measure the spin polarization of some of the dilute magnetic semiconductors, such as narrow-band (In,Mn)Sb, as well as wider gap (Ga,Mn)As. While in (In,Mn)Sb conventional Andreev reflection has been demonstrated, in (Ga,Mn)As quasiparticle density of states (DOS) broadening has been observed, possibly due to inelastic scattering effects. Here, we investigate the spin polarization, magnetic, and transport properties of epitaxially grown (Ga,Mn)Sb films with the Curie temperature of ~ 10K. The spin polarization of 57+/-5% was measured. Spectrum broadening in (Ga,Mn)Sb has also been observed.

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