Inelastic electron tunneling via molecular vibrations in single-molecule transistors

Details Inelastic electron tunneling via molecular vibrations in single-molecule transistors Inelastic electron tunneling via molecular vibrations in single-molecule transistors

2004-08-03

arxiv.org/abs/cond-mat/0408052v1

Phys. Rev. Lett. 93, 266802 (2004)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 4 figures. Supplementary information available upon request

Scientific paper

10.1103/PhysRevLett.93.266802

In single-molecule transistors, we observe inelastic cotunneling features that correspond energetically to vibrational excitations of the molecule, as determined by Raman and infrared spectroscopy. This is a form of inelastic electron tunneling spectroscopy of single molecules, with the transistor geometry allowing in-situ tuning of the electronic states via a gate electrode. The vibrational features shift and change shape as the electronic levels are tuned near resonance, indicating significant modification of the vibrational states. When the molecule contains an unpaired electron, we also observe vibrational satellite features around the Kondo resonance.

Affiliated with

Also associated with

No associations

Rating

Inelastic electron tunneling via molecular vibrations in single-molecule transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Inelastic electron tunneling via molecular vibrations in single-molecule transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Inelastic electron tunneling via molecular vibrations in single-molecule transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-307092