Inducing Chalcogenide Phase Change with Ultra-Narrow Carbon Nanotube Heaters

Details Inducing Chalcogenide Phase Change with Ultra-Narrow Carbon Nanotube Heaters Inducing Chalcogenide Phase Change with Ultra-Narrow Carbon Nanotube Heaters

2009-10-24

arxiv.org/abs/0910.4672v2

Appl. Phys. Lett. 95, 243103 (2009)

Physics

Condensed Matter

Materials Science

Scientific paper

10.1063/1.3273370

Carbon nanotube (CNT) heaters with sub-5 nm diameter induce highly localized phase change in Ge2Sb2Te5 (GST) chalcogenide. A significant reduction in resistance of test structures is measured as the GST near the CNT heater crystallizes. Effective GST heating occurs at currents as low as 25 uA, significantly lower than in conventional phase change memory with metal electrodes (0.1-0.5 mA). Atomic force microscopy reveals nucleation sites associated with phase change in GST around the CNT heater. Finite element simulations confirm electrical characteristics consistent with the experiments, and reveal the current and phase distribution in GST.

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