Indirect electric field doping of the CuO2 planes of the cuprate NdBa2Cu3O7 superconductor

Details Indirect electric field doping of the CuO2 planes of the cuprate NdBa2Cu3O7 superconductor Indirect electric field doping of the CuO2 planes of the cuprate NdBa2Cu3O7 superconductor

2008-01-14

arxiv.org/abs/0801.1878v1

Phys. Rev. Lett. 100, 056810 (2008)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 4 figures, Phys. Rev. Lett. accepted January (2008)

Scientific paper

10.1103/PhysRevLett.100.056810

The mechanism of field-effect doping in the "123" high critical temperature superconductors (HTS) has been investigated by x-ray absorption spectroscopy in the presence of an electric field. We demonstrate that holes are created at the CuO chains of the charge reservoir and that field-effect doping of the CuO2 planes occurs by charge transfer, from the chains to the planes, of a fraction of the overall induced holes. The electronic properties of the charge reservoir and of the dielectric/HTS interface determine the electric field doping of the CuO2 planes

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