InAs/InP single quantum wire formation and emission at 1.5 microns

Details InAs/InP single quantum wire formation and emission at 1.5 microns InAs/InP single quantum wire formation and emission at 1.5 microns

2006-06-06

arxiv.org/abs/cond-mat/0606134v2

APPLIED PHYSICS LETTERS 89, 233126 (2006)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages and 3 figures submitted to Applied Physics Letters

Scientific paper

10.1063/1.2403928

Isolated InAs/InP self-assembled quantum wires have been grown using in situ accumulated stress measurements to adjust the optimal InAs thickness. Atomic force microscopy imaging shows highly asymmetric nanostructures with average length exceeding more than ten times their width. High resolution optical investigation of as-grown samples reveals strong photoluminescence from individual quantum wires at 1.5 microns. Additional sharp features are related to monolayer fluctuations of the two dimensional InAs layer present during the early stages of the quantum wire self-assembling process.

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