In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices

Details In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices

2008-08-04

arxiv.org/abs/0808.0465v2

Phys. Rev. Lett. 101, 226603 (2008)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 3 figures

Scientific paper

10.1103/PhysRevLett.101.226603

We show that an insulated electrostatic gate can be used to strongly suppress ubiquitous background charge noise in Schottky-gated GaAs/AlGaAs devices. Via a 2-D self-consistent simulation of the conduction band profile we show that this observation can be explained by reduced leakage of electrons from the Schottky gates into the semiconductor through the Schottky barrier, consistent with the effect of "bias cooling". Upon noise reduction, the noise power spectrum generally changes from Lorentzian to $1/f$ type. By comparing wafers with different Al content, we exclude that DX centers play a dominant role in the charge noise.

Affiliated with

Also associated with

No associations

Rating

In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In situ reduction of charge noise in GaAs/AlGaAs Schottky-gated devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-384944