In Situ Imaging of the Conducting Filament in a Silicon Oxide Resistive Switch

Details In Situ Imaging of the Conducting Filament in a Silicon Oxide Resistive Switch In Situ Imaging of the Conducting Filament in a Silicon Oxide Resistive Switch

2011-10-17

arxiv.org/abs/1110.3755v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

7 pages, 7 figures

Scientific paper

The nature of the conducting filaments in many resistive switching systems has been elusive. Through in situ transmission electron microscopy, we image the real-time formation and evolution of the filament in a silicon oxide resistive switch. The electroforming process is revealed to involve the local enrichment of silicon from the silicon oxide matrix. Semi-metallic silicon nanocrystals with structural variations from the conventional diamond cubic form of silicon are observed, which likely accounts for the conduction in the filament. The growth and shrinkage of the silicon nanocrystals in response to different electrical stimuli show energetically viable transition processes in the silicon forms, offering evidence to the switching mechanism. The study here also provides insights into the electrical breakdown process in silicon oxide layers, which are ubiquitous in a host of electronic devices.

Affiliated with

Also associated with

No associations

Rating

In Situ Imaging of the Conducting Filament in a Silicon Oxide Resistive Switch does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with In Situ Imaging of the Conducting Filament in a Silicon Oxide Resistive Switch, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and In Situ Imaging of the Conducting Filament in a Silicon Oxide Resistive Switch will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-319107