Physics – Condensed Matter – Materials Science
Scientific paper
2002-03-20
Phys. Rev. B 66, 075218 (2002)
Physics
Condensed Matter
Materials Science
10 pages, 10 figures included
Scientific paper
10.1103/PhysRevB.66.075218
We have studied the critical temperature of Diluted Magnetic Semiconductors by means of Monte Carlo simulations and Coherent-Potential-Approximation (CPA) calculations. In our model for this syste m, the magnetic ions couple with the carriers through an antiferromagnetic exchange interaction, $J$, and an electrostatic interaction $W$. The effective impurity potential $J-W$ controls the hybridization between the magnetic impurities and the hole charge on the dopants. We find that the critical temperature depends substantially on the hole charge on the magnetic impurities. The CPA critical temperature is always lower than the obtained in the Monte Carlo simulations, although all trends in the simulation results are reproduced in the CPA calculations. Finally we predict the existence of pockets of phase segregation instability close to the carriers band edges.
Brey Luis
Calderon M. J.
Gómez-Santos Guillermo
No associations
LandOfFree
Impurity-Semiconductor Band Hybridization Effects on the Critical Temperature of Diluted Magnetic Semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Impurity-Semiconductor Band Hybridization Effects on the Critical Temperature of Diluted Magnetic Semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Impurity-Semiconductor Band Hybridization Effects on the Critical Temperature of Diluted Magnetic Semiconductors will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-494724