Impurity Scattering and Mott's Formula in Graphene

Details Impurity Scattering and Mott's Formula in Graphene Impurity Scattering and Mott's Formula in Graphene

2007-04-23

arxiv.org/abs/0704.2966v1

Physical Review B 76, 193401 (2007)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

5 pages, 3 figures

Scientific paper

10.1103/PhysRevB.76.193401

We present calculations of the thermal and electric linear response in graphene, including disorder in the self-consistent t-matrix approximation. For strong impurity scattering, near the unitary limit, the formation of a band of impurity states near the Fermi level leads to that Mott's relation holds at low temperature. For higher temperatures, there are strong deviations due to the linear density of states. The low-temperature thermopower is proportional to the inverse of the impurity potential and the inverse of the impurity density. Information about impurity scattering in graphene can be extracted from the thermopower, either measured directly, or extracted via Mott's relation from the electron-density dependence of the electric conductivity.

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