Impurity potential fluctuations for selectively doped p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime

Details Impurity potential fluctuations for selectively doped p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime Impurity potential fluctuations for selectively doped p-Ge/Ge_{1-x}Si_x heterostructures in the quantum Hall regime

2001-05-15

arxiv.org/abs/cond-mat/0105285v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

to be presented at the 9-th International Symposium "Nanostructures-2001", St.Petersburg, Russia, June 2001

Scientific paper

Two models for the long-range random impurity potential (the model with randomly distributed charged centers located within a layer and the model of the system with a spacer) are used for evaluation of the impurity potential fluctuation characteristics: the random potential amplitude, nonlinear screening length in vicinity of integer filling factors nu = 1 and nu = 2 and the background density of state (DOS). The described models are suitable for explanation of the unusually high value of DOS at nu = 1 and nu = 2, in contrast to the short-range impurity potential models.

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