Impurity-induced tuning of quantum well states in spin-dependent resonant tunneling

Details Impurity-induced tuning of quantum well states in spin-dependent resonant tunneling Impurity-induced tuning of quantum well states in spin-dependent resonant tunneling

2004-02-12

arxiv.org/abs/cond-mat/0402324v1

Phys. Rev. Lett. 93, 046603 (2004)

Physics

Condensed Matter

Materials Science

4 pages, 4 figures, submitted to Phys. Rev. Lett

Scientific paper

10.1103/PhysRevLett.93.046603

We report exact model calculations of the spin-dependent tunneling in double magnetic tunnel junctions in the presence of impurities in the well. We show that the impurity can tune selectively the spin channels giving rise to a wide variety of interesting and novel transport phenomena. The tunneling magnetoresistance, the spin polarization and the local current can be dramatically enhanced or suppressed by impurities. The underlying mechanism is the impurity-induced shift of the quantum well states (QWS) which depends on the impurity potential, impurity position and the symmetry of the QWS.

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