Impurity-induced diffusion bias in epitaxial growth

Details Impurity-induced diffusion bias in epitaxial growth Impurity-induced diffusion bias in epitaxial growth

1996-09-09

arxiv.org/abs/cond-mat/9609087v1

Physics

Condensed Matter

5 pages(with the 5 figures), latex, revtex3.0, epsf, rotate, multicol

Scientific paper

10.1103/PhysRevE.55.7785

We introduce two models for the action of impurities in epitaxial growth. In the first, the interaction between the diffusing adatoms and the impurities is ``barrier''-like and, in the second, it is ``trap''-like. For the barrier model, we find a symmetry breaking effect that leads to an overall down-hill current. As expected, such a current produces Edwards-Wilkinson scaling. For the trap model, no symmetry breaking occurs and the scaling behavior appears to be of the conserved-KPZ type.

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