Impurity effect on low-temperature polarisation of the charge-density-waves in o-TaS$_3$

Details Impurity effect on low-temperature polarisation of the charge-density-waves in o-TaS$_3$ Impurity effect on low-temperature polarisation of the charge-density-waves in o-TaS$_3$

1998-12-29

arxiv.org/abs/cond-mat/9812418v1

Physics

Condensed Matter

Strongly Correlated Electrons

RevTex, 12 pages, epsf, 2 postscript Figures. Accepted for publication in Physics Letters A

Scientific paper

10.1016/S0375-9601(98)00911-6

The temperature dependence of the low-temperature dielectric response is studied in o-TaS$_3$ samples doped by Nb, Se, and Ni and for nominally pure ones. It is found, that the low-temperature dielectric constant depends anomalously on doping and is higher for doped crystals, whereas the temperature dependence of the characteristic time of all samples follows the activation law with nearly the same activation energy $\sim 400$ K (T>20 K). The observed behaviour is inconsistent with all available explanations of the low-temperature dielectric anomaly.

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