Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors

Details Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors

2006-07-31

arxiv.org/abs/cond-mat/0607806v1

Physics

Condensed Matter

Other Condensed Matter

9 figures

Scientific paper

10.1103/PhysRevB.74.235317

We investigate transport in phosphorus-doped buried-channel metal-oxide-semiconductor field-effect transistors at temperatures between 10 and 295 K. In a range of doping concentration between around 2.1 and 8.7 x 1017 cm-3, we find that a clear peak emerges in the conductance versus gate-voltage curves at low temperature. In addition, temperature dependence measurements reveal that the conductance obeys a variable-range-hopping law up to an unexpectedly high temperature of over 100 K. The symmetric dual-gate configuration of the silicon-on-insulator we use allows us to fully characterize the vertical-bias dependence of the conductance. Comparison to computer simulation of the phosphorus impurity band depth-profile reveals how the spatial variation of the impurity-band energy determines the hopping conduction in transistor structures. We conclude that the emergence of the conductance peak and the high-temperature variable-range hopping originate from the band bending and its change by the gate bias. Moreover, the peak structure is found to be strongly related to the density of states (DOS) of the phosphorus impurity band, suggesting the possibility of performing a novel spectroscopy for the DOS of phosphorus, the dopant of paramount importance in Si technology, through transport experiments.

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