Impurity band induced by point defects in graphene

Details Impurity band induced by point defects in graphene Impurity band induced by point defects in graphene

2009-05-03

arxiv.org/abs/0905.0251v1

Europhys. Lett. 88, 68005 (2009)

Physics

Condensed Matter

Strongly Correlated Electrons

4, pages, 2 figures

Scientific paper

It is pointed out that point defects on graphene are strongly correlated and can not be treated as independent scatters. In particular, for large on-site defect potential, it is shown that defects induce an impurity band with density of state characterized by the Wigner semi-circle law. We find that the impurity band enhances conductivity to the order of $4 e^2 /h $ and explains the absence of strong localization. Furthermore,the impurity band supports ferromagnetism with the induced magnetic moment approaching 1$\mu_B$ per defect in the limit of infinite quasi-particle lifetime.

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