Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor

Details Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor Impurity Band Conduction in a High Temperature Ferromagnetic Semiconductor

2006-03-31

arxiv.org/abs/cond-mat/0603851v2

Phys. Rev. Lett. 97, 087208 (2006)

Physics

Condensed Matter

Strongly Correlated Electrons

4 pages, 4 figures

Scientific paper

10.1103/PhysRevLett.97.087208

The band structure of a prototypical dilute ferromagnetic semiconductor, Ga$_{1-x}$Mn$_{x}$As, is studied across the phase diagram via optical spectroscopy. We prove that the Fermi energy ($E_{F}$) resides in a Mn induced impurity band (IB). This conclusion is based upon careful analysis of the frequency and temperature dependence of the optical conductivity ($\sigma_{1}(\omega,T)$). From our analysis of $\sigma_{1}(\omega,T)$ we infer a large effective mass ($m^*$) of the carriers, supporting the view that conduction occurs in an IB. Our results also provide useful insights into the transport properties of Mn-doped GaAs.

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