Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization

Details Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization Improvement of the poly-3-hexylthiophene transistor performance using small molecule contact functionalization

2009-12-07

arxiv.org/abs/0912.1336v1

Appl. Phys. Lett. 95, 263313 (2009)

Physics

Condensed Matter

Materials Science

4 pages, 3 figures, 1 table; accepted for publication by Appl. Phys. Lett

Scientific paper

10.1063/1.3276694

We demonstrate an approach to improve poly-3-hexylthiophene field effect transistors by modifying the gold contacts with monolayer thick pentacenequinone (PQ) or naphthalene (NL). The effective contact resistance is reduced by a factor of two and sixteen for interlayers of PQ and NL, respectively. The observation is attributed to different injection barriers at the metal-organic interface caused by the functionalization and to an additional tunneling barrier enhancing the on/off ratios. This barrier yields to activation energies of 37meV (NL) and 104meV (PQ) below 190K, which are smaller than without functionalization, 117meV.

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