Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2009-07-29
ECS Trans. 19, 137 (2009)
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
215th Meeting of the Electrochemical Society (ECS 215), 14 pages, 6 figures
Scientific paper
10.1149/1.3119538
Graphene was epitaxially grown on both the C- and Si-faces of 4H- and 6H-SiC(0001) under an argon atmosphere and under high vacuum conditions. Following growth, samples were imaged with Nomarski interference contrast and atomic force microscopies and it was found that growth under argon led to improved morphologies on the C-face films but the Si-face films were not significantly affected. Free carrier transport studies were conducted through Hall effect measurements, and carrier mobilities were found to increase and sheet carrier densities were found to decrease for those films grown under argon as compared to high vacuum conditions. The improved mobilities and concurrent decreases in sheet carrier densities suggest a decrease in scattering in the films grown under argon.
Jr.
Campbell Paul M.
Culbertson James C.
Eddy Charles R.
Gaskill Kurt D.
No associations
LandOfFree
Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Improvement of Morphology and Free Carrier Mobility through Argon-Assisted Growth of Epitaxial Graphene on Silicon Carbide will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-521131