Improvement of current-control induced by oxide crenel in very short field-effect-transistor

Details Improvement of current-control induced by oxide crenel in very short field-effect-transistor Improvement of current-control induced by oxide crenel in very short field-effect-transistor

2005-03-22

arxiv.org/abs/cond-mat/0503556v1

Applied Physics Letters 87 (2005) 073509

Physics

Condensed Matter

Other Condensed Matter

Scientific paper

10.1063/1.1994929

A 2D quantum ballistic transport model based on the non-equilibrium Green's function formalism has been used to theoretically investigate the effects induced by an oxide crenel in a very short (7 nm) thin-film metal-oxide-semiconductor-field-effect-transistor. Our investigation shows that a well adjusted crenel permits an improvement of on-off current ratio Ion/Ioff of about 244% with no detrimental change in the drive current Ion. This remarkable result is explained by a nontrivial influence of crenel on conduction band-structure in thin-film. Therefore a well optimized crenel seems to be a good solution to have a much better control of short channel effects in transistor where the transport has a strong quantum behavior.

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