Physics
Scientific paper
Dec 2002
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4795...70b&link_type=abstract
Materials for Infrared Detectors II. Edited by Longshore, Randolph E.; Sivananthan, Sivalingam. Proceedings of the SPIE, Volume
Physics
Scientific paper
A Woollam M88 spectroscopic ellipsometer was used to characterize the molecular beam epitaxy growth nucleation of Hg1-xCdxTe layers on CdZn0.035Te substrates and the substrate temperature prior to the growth. We developed a new approach to ellipsometry data analysis to better determine the substrate temperature. It is based on the accurate determination of the critical point energies and linewidths, which display strong temperature dependence in the CdZnTe system. The new model was able to resolve temperature differences of the order of +/-2.5oC. We also show that ellipsometry can be used to characterize the nucleation of Hg1-xCdxTe on CdZnTe substrates. More work is in progress to assess the run-to-run reproducibility of our temperature measurement, and to further investigate Hg1-xCdxTe nucleation.
Badano Giacomo
Garland James W.
Sivananthan Sivalingam
Zhao Jun
No associations
LandOfFree
Improved model of HgCdTe's pseudo dielectric function for in-situ ellipsometry data analysis during MBE growth does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Improved model of HgCdTe's pseudo dielectric function for in-situ ellipsometry data analysis during MBE growth, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Improved model of HgCdTe's pseudo dielectric function for in-situ ellipsometry data analysis during MBE growth will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-1309878