Computer Science
Scientist
University of Illinois / Chicago, USA
CEA-DRT-LETI / DOPT / LIR, France
Electrical activation and electrical properties of arsenic-doped Hg1-xCdxTe epilayers grown by MBE
High-resolution FPAs on MBE-grown HgCdTe/CdTe/Ge
Improved model of HgCdTe's pseudo dielectric function for in-situ ellipsometry data analysis during MBE growth
MBE growth of HgCdTe HOT detector heterostructures
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