Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2010-08-21
Japanese Journal of Applied Physics, Vol.48, paper no. 064503, June 2009
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
http://web.iitd.ac.in/~mamidala
Scientific paper
Tunnel field effect transistor (TFET) devices are attractive as they show good scalability and have very low leakage current. However they suffer from low on-current and high threshold voltage. In order to employ the TFET for circuit applications, these problems need to be tackled. In this paper, a novel lateral strained double-gate TFET (SDGTFET) is presented. Using device simulation, we show that the SDGTFET has a higher on-current, low leakage, low threshold voltage, excellent subthreshold slope, and good short channel effects and also meets important ITRS guidelines.
Kumar Jagadesh M.
Saurabh Sneh
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