Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

Details Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots Impact of heavy hole-light hole coupling on optical selection rules in GaAs quantum dots

2010-06-02

arxiv.org/abs/1006.0347v1

Appl. Phys. Lett. 97, 051111 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 pages, 2 figures

Scientific paper

10.1063/1.3473824

We report strong heavy hole-light mixing in GaAs quantum dots grown by droplet epitaxy. Using the neutral and charged exciton emission as a monitor we observe the direct consequence of quantum dot symmetry reduction in this strain free system. By fitting the polar diagram of the emission with simple analytical expressions obtained from k$\cdot$p theory we are able to extract the mixing that arises from the heavy-light hole coupling due to the geometrical asymmetry of the quantum dot.

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