Impact of disorder on the 5/2 fractional quantum Hall state

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

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PRL 106, 206806 (2011)

Scientific paper

We compare the energy gap of the \nu=5/2 fractional quantum Hall effect state obtained in conventional high mobility modulation doped quantum well samples with those obtained in high quality GaAs transistors (heterojunction insulated gate field-effect transistors). We are able to identify the different roles that long range and short range disorders play in the 5/2 state and observe that the long range potential fluctuations are more detrimental to the strength of the 5/2 state than short-range potential disorder.

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