Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization

Details Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization

2010-01-24

arxiv.org/abs/1001.4264v1

Physics

Condensed Matter

Materials Science

3 pages, 4 figures

Scientific paper

We present numerical evidence of a novel propagation mode for superfast impact ionization fronts in high-voltage Si $p^+$-$n$-$n^+$ structures. In nonlinear dynamics terms, this mode corresponds to a pulled front propagating into an unstable state in the regime of nonlocalized initial conditions. Before the front starts to travel, field-ehanced emission of electrons from deep-level impurities preionizes initially depleted $n$ base creating spatially nonuniform free carriers profile. Impact ionization takes place in the whole high-field region. We find two ionizing fronts that propagate in opposite directions with velocities up to 10 times higher than the saturated drift velocity.

Affiliated with

Also associated with

No associations

Rating

Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Impact ionization fronts in Si diodes: Numerical evidence of superfast propagation due to nonlocalized preionization will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-696801