Imaging Stacking Order in Few-Layer Graphene

Details Imaging Stacking Order in Few-Layer Graphene Imaging Stacking Order in Few-Layer Graphene

2010-11-12

arxiv.org/abs/1011.3021v1

Nano Letters, 11, 164-169 (2011)

Physics

Condensed Matter

Materials Science

submitted to Nano Letters; supplementary information about infrared spectroscopy of ABA and ABC graphene trilayers are include

Scientific paper

10.1021/nl1032827

Few-layer graphene (FLG) has been predicted to exist in various crystallographic stacking sequences, which can strongly influence the electronic properties of FLG. We demonstrate an accurate and efficient method to characterize stacking order in FLG using the distinctive features of the Raman 2D-mode. Raman imaging allows us to visualize directly the spatial distribution of Bernal (ABA) and rhombohedral (ABC) stacking in tri- and tetra-layer graphene. We find that 15% of exfoliated graphene tri- and tetra-layers is comprised of micron-sized domains of rhombohedral stacking, rather than of usual Bernal stacking. These domains are stable and remain unchanged for temperatures exceeding $800^{\circ}$C.

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