Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields

Details Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields

2004-11-18

arxiv.org/abs/cond-mat/0411461v1

Physical Review Letters v94, 236601 (2005)

Physics

Condensed Matter

Materials Science

5 pages, 5 color figures

Scientific paper

10.1103/PhysRevLett.94.236601

Using scanning Kerr microscopy, we directly acquire two-dimensional images of spin-polarized electrons flowing laterally in bulk epilayers of n:GaAs. Optical injection provides a local dc source of polarized electrons, whose subsequent drift and/or diffusion is controlled with electric, magnetic, and - in particular - strain fields. Spin precession induced by controlled uniaxial stress along the <110> axes demonstrates the direct k-linear spin-orbit coupling of electron spin to the shear (off-diagonal) components of the strain tensor.

Affiliated with

Also associated with

No associations

Rating

Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Imaging spin flows in semiconductors subject to electric, magnetic, and strain fields will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-257401