Imaging Dissipation and Hot Spots in Carbon Nanotube Network Transistors

Details Imaging Dissipation and Hot Spots in Carbon Nanotube Network Transistors Imaging Dissipation and Hot Spots in Carbon Nanotube Network Transistors

2010-11-20

arxiv.org/abs/1011.4551v2

Applied Physics Letters vol. 98, p. 073102 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1063/1.3549297

We use infrared thermometry of carbon nanotube network (CNN) transistors and find the formation of distinct hot spots during operation. However, the average CNN temperature at breakdown is significantly lower than expected from the breakdown of individual nanotubes, suggesting extremely high regions of power dissipation at the nanotube junctions. Statistical analysis and comparison with a thermal model allow the extraction of the average tube-tube junction thermal resistance, ~4.4x10^11 K/W (thermal conductance ~2.27 pW/K). This indicates that nanotube junctions have a much greater impact on CNN transport, dissipation, and reliability than extrinsic factors such as low substrate thermal conductivity.

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