Image-potential band-gap narrowing at a metal/semiconductor interface

Details Image-potential band-gap narrowing at a metal/semiconductor interface Image-potential band-gap narrowing at a metal/semiconductor interface

2001-08-27

arxiv.org/abs/cond-mat/0108412v1

Physics

Condensed Matter

Materials Science

6 pages, 7 figures

Scientific paper

10.1103/PhysRevB.64.245112

GW approximation is used to systematically revisit the image-potential band-gap narrowing at metal/semiconductor interfaces proposed by Inkson in the 1970's. Here we have questioned how the narrowing as calculated from quasi-particle energy spectra for the jellium/Si interface depends on $r_s$ of the jellium. The gap narrowing is found to only weakly depend on $r_s$ (i.e., narrowing $\simeq 0.3$ eV even for a large $r_s = 6)$. Hence we can turn to smaller polarizability in the semiconductor side as an important factor in looking for larger narrowing.

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