Illumination-induced changes of the Fermi surface topology in three-dimensional superlattices

Physics – Condensed Matter – Mesoscale and Nanoscale Physics

Scientific paper

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7 pages, 6 figures, accepted for publication in Phys. Rev. B

Scientific paper

10.1103/PhysRevB.75.245322

The magnetoresistance of the MBE-grown GaAs/AlGaAs superlattice with Si-doped barriers has been measured in tilted magnetic fields in the as-grown state, and after brief illumination by a red-light diode at low temperature, T is approximately 0.3 K. A remarkable illumination-induced modification of magnetoresistance curves has been observed, which indicates a significant change of the superlattice Fermi surface topology. Analysis of magnetoresistance data in terms of the tight-binding model reveals that not only electron concentration and mobility have been increased by illumination, but also the coupling among 2D electron layers in neighboring quantum wells has been reduced.

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