Hysteretic magnetoresistance in polymeric diodes

Details Hysteretic magnetoresistance in polymeric diodes Hysteretic magnetoresistance in polymeric diodes

2009-05-13

arxiv.org/abs/0905.2025v1

Physics

Condensed Matter

Materials Science

Scientific paper

10.1002/pssr.200903193

We report on hysteretic organic magnetoresistance (OMAR) in polymeric diodes. We found that magnitude and lineshape of OMAR depends strongly on the scan speed of the magnetic field and on the time delay between two successive measurements. The time-dependent OMAR phenomenon is universal for diodes made with various polymers. However, the width and magnitude of OMAR varied with the polymeric material. The suggestive reason for this hysteretic behavior are trapped carriers, which in presence of a magnetic field changes the ferromagnetic ground-state of the polymer leading to long spin relaxation time. These experimental observations are significant for clarification of the OMAR phenomenon.

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