Physics – Condensed Matter – Materials Science
Scientific paper
2004-11-18
Physics
Condensed Matter
Materials Science
3 pages, 3 figures, Appl. Phys. Lett., in press
Scientific paper
10.1063/1.1845598
Transport properties have been studied for a perovskite heterojunction consisting of SrRuO$_{3}$ (SRO) film epitaxially grown on SrTi$_{0.99}$Nb$_{0.01}$O$_{3}$ (Nb:STO) substrate. The SRO/Nb:STO interface exhibits rectifying current-voltage ($I$-$V$) characteristics agreeing with those of a Schottky junction composed of a deep work-function metal (SRO) and an $n$-type semiconductor (Nb:STO). A hysteresis appears in the $I$-$V$ characteristics, where high resistance and low resistance states are induced by reverse and forward bias stresses, respectively. The resistance switching is also triggered by applying short voltage pulses of 1 $\mu$s - 10 ms duration.
Akoh H.
Fujii Takenori
Kawasaki Masahiro
Kawazoe Yoshiyuki
Sawa Akihito
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