Hysteresis in the quantum Hall regimes in electron double quantum well structures

Details Hysteresis in the quantum Hall regimes in electron double quantum well structures Hysteresis in the quantum Hall regimes in electron double quantum well structures

2004-07-21

arxiv.org/abs/cond-mat/0407577v1

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

10.1103/PhysRevB.71.153307

We present in this paper experimental results on the transport hysteresis in electron double quantum well structures. Exploring the measurement technique of fixing the magnetic field and sweeping a front gate voltage (Vg), we are able to study the hysteresis by varying the top layer Landau level fillings while maintaining a relatively constant filling factor in the bottom layer, allowing us to tackle the question of the sign of Rxx(up)-Rxx(down), where Rxx(up) is the magnetoresistance when Vg is swept up and Rxx(down) when Vg swept down. Furthermore, we observe that hysteresis is generally stronger in the even integer quantum Hall effect (IQHE) regime than in the odd-IQHE regime. This, we argue, is due to a larger energy gap for an even-IQHE state, determined by the Landau level separation, than that for an odd-IQHE state, determined by the Zeeman splitting.

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