Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism

Details Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism Hysteresis in the magneto-transport of Manganese-doped Germanium: evidence for carrier-mediated ferromagnetism

2010-04-05

arxiv.org/abs/1004.0568v1

Phys. Rev. B 81, 165204 (2010)

Physics

Condensed Matter

Materials Science

14 pages, 7 figures, to be published at Phys. Rev. B (2010)

Scientific paper

10.1103/PhysRevB.81.165204

We report the fabrication of Ge:Mn ferromagnetic semiconductors by Mn-ion implantation into Ge followed by pulsed laser annealing. Benefiting from the short time annealing, the hole concentration in Mn-implanted Ge has been increased by two orders of magnitude from 10$^{18}$ to over 10$^{20}$ cm$^{-3}$. Likely due to the high hole concentration, we observe that the longitudinal and Hall resistances exhibit the same hysteresis as the magnetization, which is usually considered as a sign of carrier-mediated ferromagnetism.

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