Hysteresis in the electronic transport of V2O3 thin films: non-exponential kinetics and range scale of phase coexistence

Details Hysteresis in the electronic transport of V2O3 thin films: non-exponential kinetics and range scale of phase coexistence Hysteresis in the electronic transport of V2O3 thin films: non-exponential kinetics and range scale of phase coexistence

2008-10-10

arxiv.org/abs/0810.1868v1

Physics

Condensed Matter

Materials Science

Accepted for publication in Europhysics Letters

Scientific paper

10.1209/0295-5075/84/47003

The thermal hysteresis of the electronic transport properties were studied for V2O3 thin films. The temporal evolution of the resistance shows the out-of-equilibrium nature of this hysteresis with a very slow relaxation. Partial cycles reveal not only a behavior consistent with phase coexistence, but also the presence of spinodal temperatures which are largely separated. The temperature spreading of phase coexistence is consistent with the bulk phase diagram in the pressure-temperature plane, confirming that the film is effectively under an effective pressure induced by the substrate.

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