Physics – Condensed Matter – Materials Science
Scientific paper
2008-01-28
Physical Review B 79, 205203 (2009)
Physics
Condensed Matter
Materials Science
5 pages, 4 figures
Scientific paper
10.1103/PhysRevB.79.205203
The electronic structure of In$_{2-x}$V$_x$O$_3$ ($x=0.08$) has been investigated using photoemission spectroscopy (PES) and x-ray absorption spectroscopy (XAS). The V $2p$ core-level PES and XAS spectra revealed trivalent electronic state of the V ion, consistent with the substitution of the V ion for the In site. The V 3d partial density of states obtained by the resonant PES technique showed a sharp peak above the O $2p$ band. While the O $1s$ XAS spectrum of In$_{2-x}$V$_x$O$_3$ was similar to that of In$_2$O$_3$, there were differences in the In $3p$ and 3d XAS spectra between V-doped and pure In$_2$O$_3$. The observations give clear evidence for hybridization between the In conduction band and the V 3d orbitals in In$_{2-x}$V$_x$O$_3$.
Cao H. T.
Fujimori Atsushi
Gupta Amita
Hwang Ing-Jye
Ishida Yasuchika
No associations
LandOfFree
Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In$_{2-x}$V$_x$O$_3$ does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In$_{2-x}$V$_x$O$_3$, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybridization between the conduction band and 3d orbitals in the oxide-based diluted magnetic semiconductor In$_{2-x}$V$_x$O$_3$ will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-156806