Physics – Condensed Matter – Mesoscale and Nanoscale Physics
Scientific paper
2010-05-11
Physics
Condensed Matter
Mesoscale and Nanoscale Physics
35 pages, 6 figures
Scientific paper
10.1038/nnano.2010.84
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibility with silicon technology, could prove useful in nanoelectronic applications. Here we report the confinement of holes in quantum-dot devices made by directly contacting individual SiGe nanocrystals with aluminium electrodes, and the production of hybrid superconductorsemiconductor devices, such as resonant supercurrent transistors, when the dot is strongly coupled to the electrodes. Charge transport measurements on weakly coupled quantum dots reveal discrete energy spectra, with the confined hole states displaying anisotropic gyromagnetic factors and strong spin-orbit coupling strength with pronounced gate-voltage and magnetic-field dependence.
Bouchiat Vincent
Fournel F.
Franceschi Silvano de
Katsaros Georgios
Lefloch François
No associations
LandOfFree
Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hybrid superconductor-semiconductor devices made from self-assembled SiGe nanocrystals on silicon will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-384579