Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

Details Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions Huge tunnelling anisotropic magnetoresistance in (Ga,Mn)As nanoconstrictions

2008-03-24

arxiv.org/abs/0803.3416v2

New J. Phys. 10, 085004 (2008)

Physics

Condensed Matter

Strongly Correlated Electrons

10 pages, 5 figures

Scientific paper

10.1088/1367-2630/10/8/085004

We report large anisotropic magnetoresistance (AMR) behaviours in single lateral (Ga,Mn)As nanoconstriction of up to 1300%, along with large multistable telegraphic switching. The nanoconstriction devices are fabricated using high-resolution electron beam lithography of a 5 nm thick (Ga,Mn)As epilayer. The unusual behaviour exhibited by these devices is discussed in the context of existing theories for enhanced AMR ferromagnetic semiconductor nanoscale devices, particularly with regard to the dependence on the magnetotransport of the bulk material. We conclude that our results are most consistent with the Coulomb blockade AMR mechanism.

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