Hug-like island growth of Ge on strained vicinal Si(111) surfaces

Details Hug-like island growth of Ge on strained vicinal Si(111) surfaces Hug-like island growth of Ge on strained vicinal Si(111) surfaces

2011-08-27

arxiv.org/abs/1108.5417v1

Applied Physics Letters, Vol. 99, 161907 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

4 figures

Scientific paper

10.1063/1.3655906

We examine the structure and the evolution of Ge islands epitaxially grown on vicinal Si(111) surfaces by scanning tunneling microscopy. Contrary to what is observed on the singular surface, three-dimensional Ge nanoislands form directly through the elastic relaxation of step-edge protrusions during the unstable step-flow growth. As the substrate misorientation is increased, the islands undergo a shape transformation which is driven by surface energy minimization and controlled by the miscut angle. Using finite element simulations, we show that the dynamics of islanding observed in the experiment results from the anisotropy of the strain relaxation.

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