Hot-hole lasers in III-V semiconductors

Physics – Condensed Matter – Other Condensed Matter

Scientific paper

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

7 pages, 4 figures (8 frames)

Scientific paper

10.1063/1.1384492

Following the success of p-Ge hot-hole lasers, there is also potential for using other semiconductor materials, notably III-V's such as GaAs and InSb. Previous analysis had suggested that a large effective mass ratio between the heavy and light holes is advantageous, which implies that InSb would make an excellent hot-hole laser. Using our Monte Carlo simulations of both GaAs and InSb hot-hole lasers in combination with a rate equation model, we see that previously accepted criteria used to predict performance are not always reliable, and we suggest suitable alternatives. The simulation results include gain and gain bandwidth as a function of field strength and laser frequency, and alternative field orientations and photon polarizations are considered. Comparisons are made with bulk p-Ge systems. The optimum conditions predicted by our simulations could then be used in the design of quantum-well hot-hole lasers.

No associations

LandOfFree

Say what you really think

Search LandOfFree.com for scientists and scientific papers. Rate them and share your experience with other people.

Rating

Hot-hole lasers in III-V semiconductors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Hot-hole lasers in III-V semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Hot-hole lasers in III-V semiconductors will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFWR-SCP-O-581283

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.