Hot electron transport in suspended multilayer graphene

Details Hot electron transport in suspended multilayer graphene Hot electron transport in suspended multilayer graphene

2010-07-11

arxiv.org/abs/1007.1755v1

Phys. Rev. B 82, 045411 (2010)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

Scientific paper

We study hot electron transport in short-channel suspended multilayer graphene devices created by a distinct experimental approach. For devices with semi-transparent contact barriers, a dip of differential conductance (dI/dV) has been observed at source drain bias Vd = 0, along with anomalies at higher Vd likely induced by optical phonon scattering. For devices with low contact barriers, only the dI/dV dip at Vd = 0 is observed, and we find a well-fit logarithmic dependence of dI/dV on both the bias Vd and the temperature T. The logarithmic Vd dependence is explained with the hot electron effect and the logarithmic T dependence could be attributed to the weak-localization in two-dimensions.

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