Hot-electron noise suppression in n-Si via the Hall effect

Physics – Condensed Matter – Materials Science

Scientific paper

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Scientific paper

10.1088/1742-5468/2009/01/P01042

We investigate how hot-electron fluctuations in n-type Si are affected by the
presence of an intense (static) magnetic field in a Hall geometry. By using the
Monte Carlo method, we find that the known Hall-effect-induced redistribution
of electrons among valleys can suppress electron fluctuations with a
simultaneous enhancement of the drift velocity.

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