Hot Carrier-Assisted Intrinsic Photoresponse in Graphene

Details Hot Carrier-Assisted Intrinsic Photoresponse in Graphene Hot Carrier-Assisted Intrinsic Photoresponse in Graphene

2011-08-18

arxiv.org/abs/1108.3826v2

Science 334 (6056), p. 648-652 (2011)

Physics

Condensed Matter

Mesoscale and Nanoscale Physics

19 pages, 4 figures

Scientific paper

10.1126/science.1211384

Graphene is a new material showing high promise in optoelectronics, photonics, and energy-harvesting applications. However, the underlying physical mechanism of optoelectronic response has not been established. Here, we report on the intrinsic optoelectronic response of high-quality dual-gated monolayer and bilayer graphene p-n junction devices. Local laser excitation at the p-n interface leads to striking six-fold photovoltage patterns as a function of bottom- and top-gate voltages. These patterns, together with the measured spatial and density dependence of the photoresponse, provide strong evidence that non-local hot-carrier transport, rather than the photovoltaic effect, dominates the intrinsic photoresponse in graphene. This novel regime, which features a long-lived and spatially distributed hot carrier population, may open the doorway for optoelectronic technologies exploiting efficient energy transport at the nanoscale.

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